unisonic technologies co., ltd utd413 power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2014 unisonic technologies co., ltd qw-r502-246.f p-channel enhancement mode ? description the utd413 can provide excellent r ds(on) and low gate charge by using utc?s advanced trench technology. the utd413 is well suited for high current load applicat ions with the excellent thermal resistance of the to-252 package. standard product utd413 is pb-free. ? features * r ds(on) < 45 m ? @ v gs =-10v, i d =-12a * r ds(on) < 69 m ? @ v gs =-4.5v, i d =-8 a * low capacitance * low gate charge * fast switching capability * avalanche energy specified ? symbol 1.gate 3.source 2.drain ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 - utd413g-aa3-r sot-223 g d s tape reel UTD413L-TN3-R utd413g-tn3-r to-252 g d s tape reel utd413l-tnd-r utd413g-tnd-r to-252d g d s tape reel note: pin assignment: g: gate d: drain s: source (1) r: tape reel (2) aa3: sot-223, tn3: to-252, tnd: to-252d (3) g: halogen free and lead free, l: lead free utd413g-aa3-r (1)packing type (2)package type (3)green package ? marking sot-223 to-252 / to-252d
utd413 power mosfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r502-246.f ? absolute maximum ratings (t a =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss -40 v gate-source voltage v gss 20 v continuous drain current i d -12 a pulsed drain current i dm -30 a avalanche current i ar -12 a repetitive avalanche energy l=0.1mh e ar 30 mj power dissipation sot-223 p d 0.78 w to-252/to-252d 2.5 w junction temperature t j +175 c storage temperature t stg -55 ~ +175 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. pulse width limited by t j(max) ? thermal data parameter symbol ratings unit junction to ambient sot-223 ja 160 c/w to-252/to-252d 50 c/w junction to case sot-223 jc 12 c/w to-252/to-252d 3 c/w note: when surface mounted to an fr4 board using minimum recommended pad size. (cu. area 0.412 sq in), steady state. ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =-10ma -40 v drain-source leakage current i dss v ds =-32v, v gs =0v -1 a gate-source leakage current i gss v ds =0v, v gs =20v 100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =-250a -1 -1.9 -3 v on state drain current i d ( on ) v ds =-5v, v gs =-10v -30 a static drain-source on-resistance r ds(on) v gs =-10v, i d =-12a 36 45 m ? v gs =-4.5v, i d =-8 a 51 69 dynamic parameters input capacitance c iss v ds =-20v, v gs =0v, f=1mhz 657 pf output capacitance c oss 143 pf reverse transfer capacitance c rss 63 pf switching parameters total gate charge 10v q g v ds =-20v, v gs =-10v, i d =-12a 14.1 nc 4.5v 7 gate source charge q gs 2.2 nc gate drain charge q gd 4.1 nc turn-on delay time t d ( on ) v gs =-10v, v ds =-20v, r l =1.7 ? , r g =3 ? 8 ns turn-on rise time t r 12.2 ns turn-off delay time t d ( off ) 24 ns turn-off fall-time t f 12.5 ns source- drain diode ratings and characteristics diode forward voltage v sd i s =-12a, v gs =0v -0.75 -1.2 v maximum body-diode continuous current i s -12 a body diode reverse recovery time t rr i f =-12a, di/dt=100a/ s 23.2 ns body diode reverse recovery charge q rr i f =-12a, di/dt=100a/ s 18.2 nc
utd413 power mosfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r502-246.f ? typical characteristics 0 50 drain current vs. gate threshold voltage gate threshold voltage, -v th (v) 250 100 150 200 300 drain current vs. drain-source breakdown voltage drain-source breakdown voltage, -bv dss (v) 0.5 0 2.0 1.0 1.5 0 0 50 30 250 10 100 150 200 300 20 50 40 350 400 2.5 450 12 0 0 4 8 10 drai n -source on-state resistance characteristics drain to source voltage, -v ds (mv) 2 6 200 600 i d =-8a v gs =-4.5v 14 400 i d =-12a v gs =-10v 1.2 0 0 0.4 0.8 1.0 drai n -source on-state resistance characteristics drain to source voltage, -v ds (mv) 0.2 0.6 50 i d =-1a v gs =-4.5v 1.4 i d =-1a v gs =-10v
utd413 power mosfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r502-246.f utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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